data sheet 1 of 10 rev. 06, 2008-03-04 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTFA260451E package h-30265-2 3-carrier cdma2000 performance v dd = 28 v, i dq = 500 ma, ? = 2680 mhz 0 10 20 30 40 50 60 25 30 35 40 45 50 output power, avg. (dbm) drain efficiency (%) -70 -65 -60 -55 -50 -45 -40 adj. ch. power ratio (dbc) alt_1 2.5 mhz adj 2.135 mhz efficiency thermally-enhanced high power rf ldmos fet 45 w, 2.62 ? 2.68 ghz description the PTFA260451E is a thermally-enhanced 45-watt, internally- matched goldmo s ? fet intended for cdma2000, super3g (3gpp tsg ran), and wimax applications from 2.62 to 2.68 ghz. thermally- enhanced packaging provide the coolest operation available. full gold metallization ensures excellent device lifetime and reliability. features ? lead-free, rohs-compliant and thermally- enhanced packaging ? internal matching for wideband performance ? typical three-carrier cdma2000 performance - average output power = 10 w - gain = 14 db - efficiency = 24% - acpr = ?52 dbc ? typical cw performance - output power at p?1db = 50 w - efficiency = 46% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability ? low hci drift ? capable of handling 10:1 vswr @ 28 v, 45 w (cw) output power rf performance cdma measurements (not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 500 ma, p out = 10 w avg, ? = 2680 mhz characteristic symbol min typ max unit adjacent channel power ratio acpr ? ?45 ? dbc gain g ps ? 14 ? db drain efficiency h d ? 24 ? % PTFA260451E *see infineon distributor for future availability.
PTFA260451E data sheet 2 of 10 rev. 06, 2008-03-04 rf performance (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 500 ma, p out = 45 w pep, ? = 2680 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 14.0 15 ? db drain efficiency h d 36 37 ? % intermodulation distortion imd ? ?30 ?28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i d = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.16 ? w operating gate voltage v ds = 28 v, i dq = 500 ma v gs 2.0 2.5 3 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 199 w above 25c derate by 1.14 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 45 w cw) r q jc 0.88 c/w ordering information type and version package outline package description marking PTFA260451E v1 h-30265-2 thermally-enhanced slotted flange, single-ended PTFA260451E *see infineon distributor for future availability.
PTFA260451E data sheet 3 of 10 rev. 06, 2008-03-04 typical performance (data taken in production test fixture) is-95 cdma performance v dd = 28 v, i dq = 500 ma, ? = 2680 mhz 0 8 16 24 32 40 48 56 25 30 35 40 45 output power (dbm), avg. drain efficiency (%) -75 -70 -65 -60 -55 -50 -45 -40 adj. ch. power ratio (dbc) efficiency alt 1 1.98 mhz adj 750 khz t case = 25c t case = 85c 3-carrier cdma2000 performance v dd = 28 v, i dq = 500 ma, ? = 2680 mhz 0 10 20 30 40 50 60 25 30 35 40 45 50 output power, avg. (dbm) drain efficiency (%) -70 -65 -60 -55 -50 -45 -40 adj. ch. power ratio (dbc) t case = 25c t case = 85c alt_1 2.5 mhz adj 2.135 mhz efficiency gain vs. output power v dd = 28 v, ? = 2680 mhz 13 14 15 16 17 25 30 35 40 45 50 output power (dbm) power gain (db) i dq = 500 ma i dq = 650 ma i dq = 350 ma gain & efficiency vs. output power v dd = 28 v, i dq = 500 ma, ? = 2680 mhz 10 11 12 13 14 15 16 17 25 30 35 40 45 50 55 output power (dbm) gain (db) 0 10 20 30 40 50 60 70 drain efficiency (%) gain efficiency
PTFA260451E data sheet 4 of 10 rev. 06, 2008-03-04 broadband performance v dd = 28 v, i dq = 500 ma, p out = 4 w 12 13 14 15 16 2600 2620 2640 2660 2680 2700 frequency (mhz) gain (db), efficiency (%) -20 -15 -10 -5 0 return loss (db) gain return loss efficiency output power vs. supply voltage i dq = 500 ma, ? = 2680 mhz 45 46 47 48 22 24 26 28 30 32 34 supply voltage (v) output power (dbm) typical performance (cont.) intermodulation distortion vs. output power v dd = 28 v, i dq = 500 ma, ? 1 = 2679 mhz, ? 2 = 2680 mhz -70 -60 -50 -40 -30 -20 30 35 40 45 50 output power, pep (dbm) imd (dbc) 3rd order 7th 5th bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.09 a 0.28 a 0.46 a 0.70 a 1.39 a 2.09 a 2.78 a 3.48 a 4.17 a
PTFA260451E data sheet 5 of 10 rev. 06, 2008-03-04 wimax performance v dd = 28 v, i dq = 450 ma, (modulation = 64 qam2/3, channel bandwidth = 3.5 mhz, sample rate = 4 mhz) 0 5 10 15 20 25 30 35 15 20 25 30 35 40 45 output power (dbm) efficiency (%) -50 -45 -40 -35 -30 -25 -20 -15 evm (dbc) efficiency ? = 2.62 ghz ? = 2.68 ghz ? = 2.65 ghz wimax performance v dd = 28 v, i dq = 450 ma, ? = 2650 mhz, (modulation = 64 qam2/3, channel bandwidth = 3.5 mhz, sample rate = 4 mhz) -45 -40 -35 -30 -25 -20 -15 15 20 25 30 35 40 45 output power (dbm) evm (db) t = +25 c t = +85 c t = ?20 c wimax performance v dd = 28 v, ? = 2650 mhz (modulation = 64 qam2/3, channel bandwidth = 3.5 mhz, sample rate = 4 mhz) -45 -40 -35 -30 -25 -20 15 20 25 30 35 40 45 output power (dbm) evm (db) i dq = 270 ma i dq = 450 ma i dq = 730 ma typical wimax performance
PTFA260451E data sheet 6 of 10 rev. 06, 2008-03-04 broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 2600 19.5 ?1.5 7.5 ?0.7 2620 17.0 ?2.1 7.3 ?0.5 2650 18.6 0.8 7.0 ?0.3 2680 19.0 ?0.8 6.8 0.1 2700 18.0 ?3.0 6.7 0.2 0.1 0.3 0.5 0.2 0.4 0 . 1 0 . 1 h s t o w e l e n g t h s t o w a r d l o a d - 0 . 0 2600 mhz 2600 mhz 2700 mhz z load z source 2700 mhz z 0 = 50 w see next page for reference circuit information
PTFA260451E data sheet 7 of 10 rev. 06, 2008-03-04 a260451ef_sch rf_out rf_in r3 2k v r4 2k v c3 0.001f c2 0.001f bcp56 r1 1.3k v r2 1.2k v lm7805 c1 0.001f qq1 q1 r5 1.0k v c14 c10 0.4pf l 12 1k c8 r7 l 3 1.2pf l 2 l 1 4.7pf c7 c4 10 f 35v c5 0.1f 10 r6 v l 6 l 11 l 10 l 7 l 5 4.7pf c13 l 9 1f c17 dut c6 4.7pf v v 10 r8 l 4 l 8 4.7pf c9 1f l 14 l 13 10f 50v c16 c18 1.2pf l2 c15 .1f 10f 50v c19 4.7pf l1 c11 .1f c12 v dd v dd reference circuit reference circuit schematic for ? = 2680 mhz circuit assembly information dut PTFA260451E ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 2680 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.130 l , 50.0 w 7.87 x 1.47 0.310 x 0.058 l 2 0.061 l , 44.0 w 3.68 x 1.83 0.145 x 0.072 l 3 0.065 l , 44.0 w 3.91 x 1.83 0.154 x 0.072 l 4 0.299 l , 62.0 w 18.44 x 1.02 0.726 x 0.040 l 5 0.018 l , 44.0 w 1.09 x 1.83 0.043 x 0.072 l 6 0.029 l , 15.0 w 1.65 x 7.62 0.065 x 0.300 l 7 0.077 l , 12.5 w 4.32 x 9.45 0.170 x 0.372 l 8 0.234 l , 55.0 w 14.33 x 1.27 0.564 x 0.050 l 9 0.218 l , 55.0 w 13.36 x 1.27 0.526 x 0.050 l 10 0.050 l , 6.6 w 2.74 x 19.10 0.108 x 0.752 l 11 (taper) 0.080 l , 6.6 w / 50.0 w 4.90 x 19.10 / 1.32 0.193 x 0.752 / 0.052 l 12 0.053 l , 50.0 w 3.25 x 1.32 0.128 x 0.052 l 13 0.133 l , 50.0 w 8.13 x 1.32 0.320 x 0.052 l 14 0.070 l , 50.0 w 4.27 x 1.32 0.168 x 0.052 1 electrical characteristics are rounded.
PTFA260451E data sheet 8 of 10 rev. 06, 2008-03-04 component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key pcs6106tr-nd c5, c11, c15 capacitor, 0.1 f digi-key pcc104bct-nd c6, c7, c9, c13, c19 ceramic capacitor, 4.7 pf atc 100b 4r7 c8, c18 ceramic capacitor, 1.2 pf atc 100b 1r2 c10, c14 capacitor, 1 f atc 920c105kw c12, c16 tantalum capacitor, 10 f, 50 v garrett electronics tpse106k050r0400 c17 ceramic capacitor, 0.4 pf atc 100b 0r4 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.3 k-ohms digi-key p1.3kgct-nd r2 chip resistor, 1.2 k-ohms digi-key p1.2kgct-nd r3 chip resistor, 2 k-ohms digi-key p2.0kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5, r7 chip resistor, 1 k-ohms digi-key p1.0kect-nd r6, r8 chip resistor, 10 ohms digi-key p10ect-nd l1, l2 ferrite philips bds46/3.8.8-452 reference circuit assembly diagram* (not to scale) reference circuit (cont.) *gerber files for this circuit available on request a260451ef_assy 10 35v + rf_in rf_out c14 c16 c18 c15 c19 c17 c11 c12 c9 c10 qq1 c2 q1 c5 c4 r5 r1 r2 r3 r4 c1 c3 r7 r6 c6 r8 l1 l2 c7 c8 v dd v dd v dd c13
PTFA260451E data sheet 9 of 10 rev. 06, 2008-03-04 diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] (min) package outline specifications package h-30265-2 20.31 [.800] 10.160.25 [.400.010] 2x 2.590.38 [.107 .015] flange 9.78 [.385] 2x 7.11 [.280] 7.11 [.280] 15.23 [.600] 4x 1.52 [.060] c l c l (45 x 2.03 [.080]) s d g 2x r1.60 [.063] lid 10.160.25 [.400.010] 0.0381 [.0015] -a- 3.480.38 [.137.015] 1.02 [.040] sph 1.57 [.062] 15.600.51 [.614.020] h-30265-2-1-2303 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
data sheet 10 of 10 rev. 06, 2008-03-04 PTFA260451E confidential, limited internal distribution revision history: 2008-03-04 data sheet previous version: 2006-07-05 , data sheet page subjects (major changes since last revision) all remove references to alternate products. al page. misc updates. goldmos ? is a registered trademark of infineon technologies ag. edition 2008-03-04 published by infineon technologies ag 81726 munich , germany ? 2004 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international
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